Find the value of d(t-34)*x(t+56), d(t) being the delta function.
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Positive photo resists are used more than negative photo resists because ___________
The ______ is used to reduce the resistivity of poly silicon.
Find x(t)*u(t)
The isolated active areas are created by technique known as ___________
The chemical used for shielding the active areas to achieve selective oxide growth is?
Find the value of [d(t) – d(t-1)] * -x[t+1].
The dopants are introduced in the active areas of silicon by using which process?
If h1, h2 and h3 are cascaded, find the overall impulse response
To grow the polysilicon gate layer, which of the following chemical is used for chemical vapour deposition?
Find the value of [d(t-3) – d(t-1)] * x[t+3].
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