N-well is formed by __________ | Mcqs

Question & Answer

Q:

N-well is formed by __________

A) decomposition	B) diffusion
C) dispersion	D) filtering

Answer & Explanation Answer: B) diffusion

Explanation: N-well is formed by using ion implantation or diffusion. Ion implantation is a process by which ions of a material are accelerated in an electrical field and impacted into a solid. Diffusion is a process in which net movement of ions or molecules plays a major role.

View Answer & Explanation

Category: Electronics & Electrical MCQs
Sub Category: VLSI Mcqs

42

Related Questions

Q:

A circuit tuned to a frequency of 1.5 MHz and having an effective capacitance of 150 pF. In this circuit, the current falls to 70.7 % of its resonant value. The frequency deviates from the resonant frequency by 5 kHz. Q factor is?

Q:

_______ is sputtered on the whole wafer.

Q:

A 440 V, 50 HZ AC source supplies a series LCR circuit with a capacitor and a coil. If the coil has 100 m? resistance and 15 mH inductance, then at a resonance frequency of 50 Hz the half power frequencies of the circuit are ______________

Q:

MOS technology has more load driving capability.

Q:

What is the disadvantage of the MOS device?

Q:

Given the signal
Y (t) = cos t, if t>0
Sin t, if t?0
The correct statement among the following is?

Q:

What are the advantages of BiCMOS?

Q:

What are the features of BiCMOS?

Q:

In a series RLC circuit for lower frequency and for higher frequency, power factors are respectively ______________

Q:

BiCMOS has low power dissipation.

Comment Section

Recent Comments